- 您现在的位置：买卖IC网 > Sheet目录452 > IXFH60N20 (IXYS)MOSFET N-CH 200V 60A TO-247
IXFH 60N20
IXFT 60N20
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
TO-247 AD (IXFH) Outline
g fs
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
30
40
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
5200
880
pF
pF
1
2
3
Terminals:
1 - Gate
2 - Drain
C rss
t d(on)
260
38
pF
ns
3 - Source
Tab - Drain
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
63
ns
t d(off)
R G = 2.5 ? (External),
85
ns
Dim.
Millimeter
Inches
t f
Q g(on)
26
155
ns
nC
A
A 1
A 2
Min.
4.7
2.2
2.2
Max.
5.3
2.54
2.6
Min.
.185
.087
.059
Max.
.209
.102
.098
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
38
55
nC
nC
b
b 1
b 2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
.4
.8
.016
.031
R thJC
0.42
K/W
D
E
20.80
15.75
21.46
16.26
.819
.610
.845
.640
R thCK
(TO-247)
0.25
K/W
e
5.20
5.72
0.205
0.225
L
L1
? P
19.81
3.55
20.32
4.50
3.65
.780
.140
.800
.177
.144
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
Q
R
S
5.89
4.32
6.15
6.40
5.49
BSC
0.232
.170
242
0.252
.216
BSC
I S
I SM
V SD
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
60
240
1.5
A
A
V
TO-268 Outline
t rr
Q RM
I RM
I F = 25A, -di/dt = 100 A/ μ s, V R = 50 V
0.7
8
250
ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFH66N20Q
MOSFET N-CH 200V 66A TO-247
IXFH6N120P
MOSFET N-CH 1200V 6A TO-247
IXFH6N120
MOSFET N-CH 1200V 6A TO-247
IXFH6N90
MOSFET N-CH 900V 6A TO-247AD
IXFH70N30Q3
MOSFET N-CH 300V 70A TO-247
IXFH74N20
MOSFET N-CH 200V 74A TO-247
IXFH75N10Q
MOSFET N-CH 100V 75A TO-247AD
IXFH75N10
MOSFET N-CH 100V 75A TO-247AD
相关代理商/技术参数
IXFH60N20F
功能描述:MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH60N20F_08
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerRF Power MOSFET F-Class: MegaHertz Switching
IXFH60N25Q
功能描述:MOSFET 60 Amps 250V 0.047 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH60N50P3
功能描述:MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH66N20Q
功能描述:MOSFET 66 Amps 200V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH67N10
功能描述:MOSFET 67 Amps 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH68N20
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET POWER MOSFETs
IXFH69N30P
功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube